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| (R) TYN606 TYN1006 SCR A FEATURES High surge capability High on-state current High stability and reliability s s s G K DESCRIPTION The TYN606 and TYN1006 Family of Silicon Controlled Rectifiers are high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. K A G TO-220AB ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM I2t dI/dt Tstg Tj Tl Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle, single phase circuit) Non repetitive surge peak on-state current (Tj initial = 25C) I2t value Critical rate of rise of on-state current Gate supply: IG = 100mA dIG/dt = 1A/s Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case Tc = 110C Tc = 110C tp = 8.3ms tp = 10ms tp = 10ms Value 6 3.8 73 70 24.5 50 -40 to +150 -40 to +125 260 A2s A/s C C Unit A A A TYN Symbol VDRM VRRM Parameter 606 Repetitive peak off-state voltage Tj = 125C 600 1006 1000 V Unit September 2001 - Ed: 1A 1/4 TYN606 TYN1006 THERMAL RESISTANCE Symbol Rth (j-a) Rth (j-c) DC Junction to ambient Junction to case for DC Parameter Value 60 2.5 Unit C/W C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20s) IFGM = 4A (tp = 20s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL IH VTM IDRM IRRM dV/dt tq VD = 12V (DC) VD = 12V (DC) VD = VDRM RL = 33 RL = 33 RL = 3.3k Test conditions Tj = 25C Tj = 25C Tj =110C Tj = 25C Tj = 25C Tj = 25C Tj = 25C Tj = 25C Tj = 110C Linear slope up to VD = 67% VDRM gate open VD=67%VDRM ITM= 12A VR= 25V dITM/dt=30 A/s dVD/dt= 50V/s Tj = 110C Tj = 110C VRGM = 5V Value MAX. MAX. MIN. TYP. TYP. MAX. MAX. MAX. MAX. MIN. TYP. 15 1.5 0.2 2 50 30 1.6 0.01 2 200 70 Unit mA V V s mA mA V mA VD = VDRM IG = 40mA dIG/dt = 0.5A/s IG = 1.2IGT IT = 100mA Gate open ITM = 12A VDRM rated VRRM rated tp = 380s V/s s Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) Tcase (oC) Rth = 0 o C/W 5 o C/W 10 o C/W 15 o C/W P (W) 7 360 O 7 6 DC = 180 = 120 = 90 = 60 o o o o 6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 = 30 o -110 5 4 = 180 o -115 3 2 -120 IT(AV)(A) 1 Tamb ( C) o 2.5 3.0 3.5 4.0 4.5 5.0 0 0 20 40 60 80 100 120 -125 140 2/4 TYN606 TYN1006 Fig. 3: Average on-state current versus case temperature. I T(AV) (A) Fig. 4: Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 7 DC 6 Zth(j-c) 5 4 = 180 o 0.1 Zth(j-a) 3 2 1 0 0 10 20 30 40 50 60 70 o Tcase ( C) 80 90 100 110 120 130 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t 10ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values). 3/4 TYN606 TYN1006 PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. B C Millimeters 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 15.90 0.598 Inches 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.102 Min. Typ. Max. Min. Typ. Max. A a1 a2 F b2 L I A B b1 b2 C c1 c2 e F I I4 L l4 a1 c2 l3 l2 a2 15.80 16.40 16.80 0.622 0.646 0.661 b1 e M c1 l2 l3 M OTHER INFORMATION Ordering type TYNxx06 s s s s Marking TYNxx06 Package TO-220AB Weight 2.3 g Base qty 250 Delivery mode Bulk Epoxy meets UL94,V0 Cooling method: C Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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